The EBSD sample is usually tilted at approximately 70° relative to normal incidence of the electron beam to optimise both the contrast in the diffraction pattern and the fraction of electrons scattered from the sample.

For smaller tilt angles the contrast in the diffraction pattern decreases (Figure 8).

Figure 8 Effect of tilt on silicon diffraction pattern.

(a) Sample tilt 70 degrees.

(b) Sample tilt 60 degrees.

(c) Sample tilt 50 degrees.